| 摘要 |
PURPOSE:To obtain a solar cell which assures high efficiency and resistivity to radioactive rays by using an n-type InP having excellent resistivity to radio active rays as a substrate layer and forming an i-layer between the p<+> layer and n-layer. CONSTITUTION:A solar cell is composed of an anti-reflection film 1, a front surface electrode 1, a p<+> layer 3, i layer 4, an n layer 5, and a rear surface electrode 6. Since minority carrier generated by optical pumping is moved by an internal field generated by such p<+>-i-n structure, the minority carrier diffusion length is virtually increased, providing expectation of improvement of efficiency. Namely, it is characterized in that the i-layer is provided between the p<+> layer and n layer, the collecting efficiency of the optically pumped is enhanced by the internal field in the i-layer thereby realizing high efficiency, an n type InP having excellent resistivity to radioactive rays is used as the substrate layer and radioactive ray resistivity is enhanced by optimization of the thickness of i-layer. |
