| 摘要 |
PURPOSE:To be able the use of a substrate as a hybrid IC substrate or a substrate for a high frequency high power transistor by preparing the substrate by providing an insulating layer having a large thermal conductivity on a single crystal silicon or a polycrystalline silicon substrate to make it to be of a high thermal conductivity and a low permittivity. CONSTITUTION:A silicon substrate 1 is set at an RF applying electrode 2 side, a DC voltage is applied through a high frequency choke coil 3, and a magnetic field B is applied to the vicinity of the substrate in a direction perpendicular to an electric field, i.e., parallel to the surface of the substrate. The substrate is heated to 200-300 deg.C to discharge with both DC and RF mixture. H2, CH4, SiH4 are fed as reaction gases from a gas inlet 4, an RF power is applied and a DC voltage is applied. The pressure of a reaction chamber is 0.3-5Torr, and a silicon carbide film having approx. 3-5mum is obtained in approx. 1hr of reaction time. |
