| 摘要 |
PURPOSE:To offer a dry etching device which reduces neither the efficiency of countermeasure for improving throughput as well as the efficiency of the device installing space in case of the formation of larger bore diameter wafers nor the uniformity of etching lower than the level of the parallel plate electrode type by a method wherein both of the opposed electrodes are spherically curved. CONSTITUTION:This dry etching device is constituted in a design that a spherically curved anode 3 and a spherically curved cathode 4 are disposed facing each other in the interior of an etching chamber 2 to be held in a vacuum state by a vacuum pump 1 and also, the cathode 4 is connected to a motor 6 through a rotating shaft 5 and can be rotated during the time of etching. In the case of an etching treatment, gas is introduced between the electrodes through a gas introducing port 7 and also, a high-frequency voltage is impressed between the electrodes by a high-frequency power source 8 and the surfaces of semiconductor substrates 9 arranged on the cathode surface are etched. Accordingly, the number of sheets of the semiconductor substrates 9 set up on the surface of the cathode 4 can be increased compared to the case the surface of the cathode is a pane. Moreover, as the both electrodes 3 and 4 are spherically curved, the cathode 4 can be rotated without interfering in the other anode 3. Therefore, to keep a uniformity of etching becomes possible.
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