发明名称 SEMICONDUCTOR LASER DEVICE
摘要 PURPOSE:To remarkably reduce reflection noise by reflected light from an external optical system by forming continuously a modulation region with variable refractivity in the laser beam emitting direction of gain region and allowing the refraction index of modulation region to change in the period longer than that of variation of oscillation wavelength of laser beam. CONSTITUTION:In a resonator of semiconductor laser device, a first clad layer 4 consisting of p-AlGaAs, an active layer 5 consisting of AlGaAs and changing gain periodically, a second clad layer 6 consisting of n-AlGaAs, an ohmic layer 7 consisting of n-GaAs and a gain region 9 consisting of gain region electrode are formed on a p-GaAs substrate 3 forming a common electrode 1 and a current rejecting layer 2 on both sides. In the direction of optical axis of such gain region 9, a third clad layer 10 consisting of p-AlGaAs, a modulation layer 11 consisting of AlGaAs and is wider than the active layer 5 in the band gap, a fourth layer 12 consisting of n-AlGaAs, an ohmic layer 13 consisting of GaAs and a modulation region 15 consisting of modulation region electrode 14 are formed.
申请公布号 JPS62154688(A) 申请公布日期 1987.07.09
申请号 JP19850294443 申请日期 1985.12.26
申请人 TOSHIBA CORP 发明人 MATSUMOTO KENJI
分类号 H01S5/00 主分类号 H01S5/00
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