Fast switching lateral insulated gate transistors.

摘要

In a lateral insulated gate transistor, the anode electrode is situated in the epitaxial layer on the substrate and is coupled to the drain region. The anode electrode may directly contact adjacent surface-adjoining drain and anode regions which are side by side and in direct contact with each other. Alternatively the drain and anode regions are spaced and the anode region is provided in a highly doped surface-adjoining region of the same conductivity type as the epitaxial layer. In this second case, the anode electrode is directly connected to the anode region and is coupled to the drain region thruogh a resistive element.