发明名称 PROCESS FOR MAXIMIZING LASER CRYSTAL EFFICIENCY BY EFFECTING SINGLE SITE FOR DOPANT
摘要 The lasing efficiency of a dopant-containing laser oxide material, such as neodymium-doped yttrium aluminum garnet, is maximized by locating the dopant ions in a single selected site of the crystal structure of the laser oxide material. This selected site is characterized by being substantially free of defects caused by anion or anion-related impurities in the crystal. The selectively located dopant ions subsequently produce a preferential radiative energy transition upon energetic excitation of the laser oxide material, which maximizes the lasing efficiency of this laser oxide material. In a preferred process embodiment, a dopant-containing laser oxide material in powder form is placed in a crystal growth chamber and is heated in a reactive atmosphere comprising atomic oxygen, which reacts with and removes water and water-derived impurities from the powder. Then, the powder is melted and a crystal of the dopant-containing laser oxide material is grown from the melt, under the reactive atmosphere.
申请公布号 EP0067521(B1) 申请公布日期 1987.07.08
申请号 EP19820302369 申请日期 1982.05.10
申请人 HUGHES AIRCRAFT COMPANY 发明人 DEVOR, DONALD P.;PASTOR, RICARDO C.;DESHAZER, LARRY G.
分类号 C30B15/00;C30B31/06;H01S3/16 主分类号 C30B15/00
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