发明名称 SEMICONDUCTOR LASER DEVICE
摘要 PURPOSE:To contrive to improve the absorption efficiency for laser beams at the detector part and the operating characteristic by a method wherein the band gap energy of the light receiving part of the active layer at the detector part is enabled to become smaller than that of the active layer at the diode part. CONSTITUTION:The width W2 of the stripe groove 3c of the detector part 12 is larger than the width W1 of the stripe groove 3a of the laser diode part 10, and is formed in the relation of W1<W2. Therefore, in lamination of the active layer 5c of the detector part 12, the growing speed on the part of a stripe groove 7c becomes higher than the growing speed in lamination of the active layer 5a of the laser diode part 10. Accordingly, a curved active region 13 is formed in the layer 5c, and the band gap of the region 13 of the detector part 12 becomes smaller than that of the layer 5a of the laser diode part 10. Since the band gap energy of a curved active region 11 of the detector part 12 is smaller than the energy of the incident laser beam, the absorption efficiency for the incident light in the region 11 is large, and the detection ability improves.
申请公布号 JPS6063978(A) 申请公布日期 1985.04.12
申请号 JP19830171583 申请日期 1983.09.17
申请人 MITSUBISHI DENKI KK 发明人 HIRONAKA MISAO;MURAKAMI TAKASHI;MIHASHI YUTAKA;TAKAMIYA SABUROU
分类号 H01S5/00;H01S5/026 主分类号 H01S5/00
代理机构 代理人
主权项
地址
您可能感兴趣的专利