| 发明名称 |
Light emitting semiconductor device. |
| 摘要 |
<p>In a carrier injection type light emitting semiconductor device with a QW structure, a p-type impurity doped layer (42) and/or an n-type impurity doped layer (45) are inserted into an optical wave guide layer (4) so as to cancel an internal electric field in an active region (43). </p> |
| 申请公布号 |
EP0227865(A1) |
申请公布日期 |
1987.07.08 |
| 申请号 |
EP19850309266 |
申请日期 |
1985.12.19 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MCILROY, PAUL W. A. C/O PATENT DIVISION;KUROBE, ATSUSHI C/O PATENT DIVISION;FURUYAMA, HIDETO C/O PATENT DIVISION |
| 分类号 |
H01S5/30;H01L33/06;H01L33/14;H01L33/30;H01S5/00;H01S5/34;H01S5/343;(IPC1-7):H01S3/19;H01L33/00 |
主分类号 |
H01S5/30 |
| 代理机构 |
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代理人 |
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