发明名称 WIRE BONDING
摘要 In order to bond a fine metal wire of a high tensile strength or a low cost to an electrode of a semiconductor chip and an external lead of a semiconductor device package, either an inert gas or an inert gas containing a predetermined concentration of oxygen is made to flow through a region in which the tip of the fine metal wire is melted by a spark discharge, parallel to the path of the discharge.
申请公布号 GB2131730(B) 申请公布日期 1987.07.08
申请号 GB19830031367 申请日期 1983.11.24
申请人 * NEC CORPORATION 发明人 ATSUSHI * KAMIJO;HITOSHI * IGARASHI
分类号 B23K20/00;B23K20/14;B23K35/38;H01L21/48;H01L21/603 主分类号 B23K20/00
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