Method of producing a thin-film transistor, and transistor so manufactured.

摘要

Method of producing a thin-film transistor having a gate which is self-aligned relative to the drain and to the source of the latter. The method consists in producing the gate (4) of the transistor on a substrate (2); in depositing an insulating layer (6) on the substrate and the gate; in depositing a first layer of hydrogenated amorphous silicon (8) on the insulating layer; in depositing a second layer of hydrogenated amorphous silicon of n+ type (10) on the first silicon layer, and in producing the source and the drain of the transistor. Application to the production of active matrices for flat liquid crystal screens. <IMAGE>