| 摘要 |
PURPOSE:To restrain any needless vapor growth film from being produced on a reaction chamber wall surface by a method wherein two kinds of reactive gases are rectified and fed to a silicon substrate and a susceptor while being wrapped up by a purging gas. CONSTITUTION:A silicon substrate 20 horizontally held by a susceptor 21 is arranged on the central part of a reaction chamber with almost even sectional shape. The first reactive gas flows over the substrate 20 and the susceptor 21 being stratified through a rectifying port 40 while the second reactive gas flows under the susceptor 21 being stratified through another rectifying port 42 respectively in parallel with one another. Both reactive gases are mixed with each other immediately before the susceptor 21 by molecular diffusion to form vapor growth film on the substrate 20 heated up to a specified temperature by a radiation heater 22 outside the reaction chamber. Furthermore, a purging gas is fed in parallel with the wall surface of reactive chamber through the other rectifying port 47 so as to wrap up the reactive gases. Through these procedures, the concentration of reactive gases on the reaction chamber wall surface can be reduced to restrain any needless vapor growth film from being produced.
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