| 摘要 |
<p>PURPOSE:To increase channel width while lowering ON resistance by forming an independent insular semiconductor or conductor film pattern on the lower side of a bonding pad. CONSTITUTION:In a source bonding pad section, a source bonding pad 12 is shaped integrally with an Al electrode film 9, and a lead wire 13 for a source electrode is fused onto the bonding pad 12. A cell is also shaped to the lower side of the pad 12 in the same manner as other sections. On the other hand, the film 9 is ohmic-connected to semiconductor layers 4 and 8 through insulating films 5d and source-electrode leading-out opening sections in the cells formed in a CVD-SiO2 film. Accordingly, active regions are also formed on the lower side of the pad 12, thus lengthening channel width, then acquiring large currents while lowering ON resistance.</p> |
