| 摘要 |
PURPOSE:To obtain an FET with an excellent yield by a method wherein a first electrode is formed onto a transparent substrate, an insulating layer, a semiconductor layer and a transparent conductive-film negative type photosensitive resin are superposed on the substrate, an etching mask is shaped through exposure from the substrate side and a second electrode and a third electrode are formed. CONSTITUTION:A NiCr electrode 12 is shaped to a glass plate 11, and an SINx film 13, an a-Si film 14 and an ITO film 15 are laminated. A negative type photosensitive resin 16 is applied, and a resin pattern 16a is formed through exposure and development by ultraviolet rays (l) from the substrate 11 side, using the electrode 12 as a mask. The ITO 15 is etched, employing the pattern 16a as a mask, the mask is removed, and a second electrode 17 and a third electrode 18 for a source and a drain are shaped, thus completing a TFT. According to the method, since the TFT can be manufactured only through an etching method without depending upon a lift-off method, short circuits between the source and the drain or dust is reduced, thus improving yield, then also enhancing reliability. |
