| 摘要 |
PURPOSE:To obtain a vertical oscillation type laser by forming a groove for burying a clad layer in a semiconductor hetero-multilayer film according to a predetermined pattern, burying p- and n-type clad layers and using a held hetero-multilayer film section as an optical resonator in the direction vertical to a substrate functioning as an active layer concurrently. CONSTITUTION:A hetero-multilayer film 21 is shaped on a semi-insulating substrate 10 extending over a wide area, and grooves 22 reading the substrate 10 are formed through selective etching. p-type clad layers 12 are buried through a proper technique. The layer 12 is separated in parallel in the Y direction, and wide and narrow width are repeated alternately in the X direction. Likewide, grooves 23 are formed, and n-type clad layers 13 are buried. Sections 11 among adjacent clad layers 12, 13 constitute optical resonators serving as active layers concurrently, and narrow width W represents the width of the active layer and the thickness L of the hetero-film 21 laser length. A vertical oscillation type laser having high carrier-confinement efficiency and low threshold characteristics is acquired by complete transverse type double-hetero structure.
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