| 摘要 |
PURPOSE:To change a eutectic metal into an Si crystal for a solar cell by using a traveling zoning method by employing Sn as the eutectic metal to polysilicon having high purity. CONSTITUTION:One end surface of a polysilicon column 1, both end surfaces thereof are flat and parallel, is dipped in Sn under the state of melting, and a uniform Sn film 2 is attached. The lean ground surface of single crystal Si 3 is brought into contact with the Sn film 2, an Sn attached surface A is heated at 90 deg.C and another end surface B at 1,050 deg.C by 4-7, the column is thermally insulated 8, 12 and a heat flow in the column is directed only in the axial direction. Temperature difference in the melt phase is brought to 10 deg.C and an axial temperature gradient to 321 deg.C/cm, and the column is processed at melt-phase travel speed of approximately 7mum/min and a cooling rate in the melt phase of approximately 0.2 deg.C/min. According to the constitution, a crystal available for a substrate for a solar cell is acquired automatically at low cost by means of simple equipment as compared to an FZ method. |
