ONE-DIMENSIONAL SEMICONDUCTOR IMAGE PICKUP DEVICE AND ONE-DIMENSIONAL SEMICONDUCTOR PHOTOSENSOR FOR THE SAME

摘要

PURPOSE:To increase output current per unit cell and realize high speed operation by composing a photo detector of photosensor cell of SIT. CONSTITUTION:In a photosensor cell, an n<-> layer 2 is formed on the one surface of n<+> substrate 1 and a gate region 3 consisting of p<+> region is formed on the layer 2. A gate electrode 5 is provided on the surface of region 3 through an insulating film 4 and a capacitor is formed between the region 3 and electrode 5. A source region 6 consisting of n<+> region is formed on the layer 2 in such a manner as being surrounded by the region 3. The source electrode 7 is provided on the region 6, and the electrode 7 is connected to a video signal output end 11 through a switching transistor SSp. Meanwhile a drain electrode 9 is provided in common to all the photosensors on the other surface of the substrate 1. In such a structure, the optically pumped holes flow into the region 3 of SIT by the optical input 12 and an optical signal is written. According to this structure, since the photo detector is formed of SIT, a large light amplification effect can be attained and high speed operation can be realized.