发明名称 METALLIC MOLD FOR RESIN SEALED SEMICONDUCTOR DEVICE
摘要 PURPOSE:To extend the life of metallic molds enabling them to be used repeatedly for a long time by a method wherein at least a part of material in contact with the forming material of metallic molds for semiconductor device is formed of the material with specified hardness, Young's modulus and deflective strength. CONSTITUTION:Within metallic molds for resin sealed semiconductor device, a part in contact with the forming material of metallic molds formed of the material with Rockewll hardness (C scale) exceeding 67, Young's modulus of 2X10<4>-6X10<4>kg/mm<2>, deflective strength exceeding 60kg/mm<2> preferably 200kg/mm<2>. Such materials as ferratic, stellite, supermetal, SiC, high speed steel and ceramics can be applicable to said material. For example, within the upper metallic mold 1 and the lower metallic mold 2 of resin sealed IC, a cavity 5 is filled with resin fed from a runner 3 through a gate 4. It is recommended to use said metallic mold material for the gate 4 extremely narrow and especially subject to remarkable wear.
申请公布号 JPS62152131(A) 申请公布日期 1987.07.07
申请号 JP19850297795 申请日期 1985.12.25
申请人 SHIN ETSU CHEM CO LTD 发明人 UENO SUSUMU;KANEDA MASARU;SHIMIZU SHINICHI;YOSHIDA TETSUO
分类号 H01L21/56;B29C45/14;B29C45/37;B29K105/20;B29L31/34 主分类号 H01L21/56
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