发明名称 |
Simulated transistor/diode |
摘要 |
A circuit capable of simulating a transistor or a semiconductor diode with controllably adjusted voltage characteristics contains a main transistor (Q0). An input voltage (VCS) to a control system (8) is amplified with a gain set by a pair of resistors (R1 and R2) to produce a control voltage (VC) for the transistor. This downscales the forward voltage characteristics of the circuit from those of the transistor. A floating power supply (10) in series with the control electrode of the transistor permits upscaling or further downscaling of the circuit voltage range.
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申请公布号 |
US4678947(A) |
申请公布日期 |
1987.07.07 |
申请号 |
US19840658333 |
申请日期 |
1984.10.05 |
申请人 |
SIGNETICS CORPORATION |
发明人 |
HUIJSING, JOHAN H.;DHUYVETTER, TIMOTHY A. |
分类号 |
H03G11/00;G01R19/22;G06G7/62;H03D1/18;(IPC1-7):G06G7/12;H03K3/01;H03K3/26 |
主分类号 |
H03G11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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