发明名称 Simulated transistor/diode
摘要 A circuit capable of simulating a transistor or a semiconductor diode with controllably adjusted voltage characteristics contains a main transistor (Q0). An input voltage (VCS) to a control system (8) is amplified with a gain set by a pair of resistors (R1 and R2) to produce a control voltage (VC) for the transistor. This downscales the forward voltage characteristics of the circuit from those of the transistor. A floating power supply (10) in series with the control electrode of the transistor permits upscaling or further downscaling of the circuit voltage range.
申请公布号 US4678947(A) 申请公布日期 1987.07.07
申请号 US19840658333 申请日期 1984.10.05
申请人 SIGNETICS CORPORATION 发明人 HUIJSING, JOHAN H.;DHUYVETTER, TIMOTHY A.
分类号 H03G11/00;G01R19/22;G06G7/62;H03D1/18;(IPC1-7):G06G7/12;H03K3/01;H03K3/26 主分类号 H03G11/00
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