| 摘要 |
PURPOSE:To realize the mounting in high packing density by arranging electrode pads in two or more lines on a semiconductor element and joining the pads and leads through the thermal bonding of bump on the electrode pads of semiconductor element or the bump at the end part of lead of tape carrier. CONSTITUTION:Electrodes on the semiconductor element are formed in small size and alternately, for example, in two lines. Next, an electrode lead 4 is connected on the long length polyimide resin tape 6 through a bonding agent 5. This lead 4 is manufactured in different lengths in every other one from the thin copper foil using the rithography technology and etching method. A metal bump, such as a gold bump is formed, for example, in the specified thickness to the end part of each lead by the electrolyte plating method, position adjustment is carried out so that the tape carrier is matched on the bump position of the electrode pads and end part of lead, and they are heated and pressed with a bonding tool. After a metal barrier layer of Cr, Ni or the like is vacuum- deposited on the electrode pads of semiconductor element, gold is vacuum- deposited and the film lead is thermally bonded. |
