| 摘要 |
PURPOSE:To obtain an electrophotographic sensitive body having an excellent electrostatic charge characteristic and photosensitivity by using amorphous silicon as a photoconductive layer and providing AlNx as an intermediate layer between the photoconductive layer and base. CONSTITUTION:The intermediate layer layer 2 is provided on the base 1 and the photoconductive layer 3 is provided in direct contact with said layer 2. A metal such as Al or Cr or the alloy thereof is used as the base 1. The intermediate layer 2 is constituted of nonphotoconductive material essentially consisting of an Al element and N atom (hereafter expressed as AlNx). Said layer effectively prevents the inflow of electric charge from the base 1 side into the photoconductive layer 3 and allows the easy passage of the carrier, which is generated in the photoconductive layer 3 by the irradiation of an electromagnetic wave and moves toward the base 1 side, from the layer 3 side to the base 1 side. The AlNx is formed by a plasma CVD method or the like using Al-HCl-NH3, etc. The amorphous Si (a-Si:H, a-Si:H:X, a-Si:X according to the kind of the atoms to be incorporated into the film, where X: halogen atom) of the layer 3 is formed by a vapor deposition method or the like using SiH4, etc. |
