| 摘要 |
PURPOSE:To form a desirable pattern with certainty by preventing the residue of a resist from being stuck and the residual resist pattern from remaining on a thin film without being peeled. CONSTITUTION:The thin base film is coated with the resist, exposed, and developed to form the resist pattern on the thin film. It is etched with an acid solution lower in temperature than the acid solution to be used in a step of peeling the residual resist pattern, and the residual resist pattern is immersed in the acid solution to render the pattern gradually hydrophilic from the surface layer and to swell it simultaneously, thus permitting the resist residue to be prevented from being stuck and the remaining resist pattern to be prevented from remaining on the thin film of Cr or the like without being peeled, and consequently, the desired pattern is formed. |
