| 摘要 |
PURPOSE:To obtain a semiconductor device in which a power module sheath case can be mounted on a substrate even if the centers of two holes of the power module sheath case and the substrate do not coincide by making the mounting hole of a substrate larger than the mounting hole of a sheath case as far as possible. CONSTITUTION:An insulating type heat sink substrate 4 and a power module sheath case 6 are coupled via bolt 7 passing through mounting holes 11 formed in both. The hole 11 of the substrate 4 is increased in the amount added with the clearance between the substrate 4 and the case 6 and the length of the hole that the allowable size becomes maximum as compared with the mounting hole 10 of the case 6. Thus, even if the centers of the two holes are displaced due to the irregularity in the amount of bonding materials, the power module sheath case can be mounted on a heat sink fin without damaging an insulating layer. |
