| 摘要 |
PURPOSE:To enable formation of a dense and good quality thin film at a low temperature by physical vapor deposition irradiated with light which has greater energy than the band gap energy of the thin film on the surface of the thin film. CONSTITUTION:An evaporation material 32 placed in an evaporation gun 24 is made vapor by being heated in a high vacuum and is evaporated on a sample substrate 31. When an evaporated film 33 is started to be formed by the evaporation in the state wherein the sample substrate 31 is irradiated with laser light 12, a pair of an electron and a positive hole can be formed near the surface of the evaporation film 33 by previously selecting the wavelength o the laser light 12 to the value corresponding to greater energy than the band gap energy of the evaporation film 33. This enables to obtain a derivative or semiconductor thin film which is dense and has great adhesive strength even at a low temperature and is excellent in crystallinity.
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