| 摘要 |
<p>PURPOSE:To remove a crosstalk generated by a parasitic transistor effect due to adjacent drain electrodes by holding a source electrode by the drain electrodes from both right and left sides. CONSTITUTION:In a thin film field effect transistor of a forward staggered structure that a drain electrode 8a and a source electrode Sij are formed on an insulating substrate and a semiconductor film, a gate insulating film and a gate electrode gi are superposed thereon, the source electrode Sij is held from both sides by the drain electrodes di. Thus, a signal from adjacent drain electrode di+1 is stopped by the electrode of adjacent right side electrode of the drain electrode is opposed to the source electrode. Thus, a displaying electrode Pij is not affected by the influence of a crosstalk at all, and charge is stored in a picture element only by the voltage applied to the drain electrodes di.</p> |
