| 摘要 |
PURPOSE:To eliminate a parasitic MOS effectively in a high dielectric strength linear IC with a fine structure by forming the whole surface or a part of the surface of organic insulation with conductive resin. CONSTITUTION:An Al wiring is composed of a double-layer structure and a polyimide system resin film is employed as a wiring layer insulating film and a polyimide system resin film is employed as a passivation film 11 covering 2nd Al wiring 6. The polyimide system resin film is formed, for instance, in such a manner that, after a polyimide system resin prepolymer solution, obtained by the reaction between aromatic diamine and aromatic tetracarbon system anhydride, is applied to the substrate surface on which wirings are formed by spin-coating, the solvent component is vaporized and the prepolymer is subjected to a heat treatment at 200-300 deg.C and polymerized and oxidized. On the surface of the polyimide system resin film, a conductive polyimide system resin film 12 is formed. Ions such as Na<+> and Cl<-> supplied from the resin molded unit 8 of a package are trapped by the conductive polyimide resin film and ion charging on the semiconductor substrate surface can be avoided. |
