| 摘要 |
<p>PURPOSE:To reduce occurrence of disconnection defect and short-circuit defect, by constituting a drain bus line in a complete double structure and piling up three layers of P-CVD films at the crossover section of a gate bus line with the drain bus line. CONSTITUTION:After removing a resist 29 a photoresist film is again formed on the part, from where the resist 29 is removed, and the photoresist film is subjected to patterning by making back exposure, auxiliary exposure, and developing. After patterning a metallic thin film 31 for source-drain is formed on the photoresist film by vapor deposition. Then a source-drain electrode 26 is formed by performing a lifting off process and an interlayer insulating film 27 equipped with a through hole is formed. After the insulating film 27 is formed the 2nd drain bus line 28 is formed. Thus a thin-film transistor is constituted. In this case, the part of the metallic thin film 31 on a gate is removed and connected on a gate bus when the source-drain electrode 26 is formed and, therefore, a drain bus line of a complete double structure is constituted when the formation of the drain bus line 28 is completed. In addition, P-CVD films are piled up in three layers at the crossover section of the gate bus line with the drain bus line.</p> |
