| 摘要 |
PURPOSE:To improve the characteristic balance of multiple active elements by a method wherein multiple active elements to be formed on the same semiconductor substrate are respectively formed of multiple split active units while the split units of respective active elements are arrayed in mutually mixed up state. CONSTITUTION:Within a composite amplifying element 100, numerous n<+> type diffused layers 2 are arranged at equiinteval in the active region A of a p-type semiconductor substrate 1. Electrodes 3 are formed mounting on two adjacent n<+> type diffused layers 2 and 2 while multiple active units respectively playing the role of MOSFET are split-formed. The split active units in each group are connected with one another by two layered aluminum interconnections 41, 42 and through-holes TH to constitute two MOSFETs ML, MR. Furthermore, the split active units of respective MOSFETs ML, MR are arrayed in mutually mixed up state. |
