| 摘要 |
PURPOSE:To obtain the semiconductor device having the capacitance value with which patterns can be microscopically formed, and efficiency improvement and the like can be achieved with improved yield of production and non- deterioration in quality by a method wherein the depth of the impurity diffusion layer located under the region where a metal thin film electrode will be provided is unevenly formed. CONSTITUTION:A photosensitive resin film 3 is formed on the surface of a semiconductor substrate 2 whereon the prescribed impurity diffusion layer 1 is formed on the main surface by performing a photoresist process, and then an impurity diffusion layer 5 is formed by performing an impurity implantation process 4 on the main surface of the semiconductor substrate 2 using said photosensitive resin pattern 3 as a protective film. Then, after the photosensitive resin film 3 on the surface has been removed, an insulating film 6 to be turned to the interelectrode dielectric of a capacitor part is provided, the metal thin films of aluminum, molybdenum, polycrystalline silicon and the like are attached, and a metal thin film electrode 7 is formed by performing a photoetching process. Subsequently, an insulating film 8 is provided for the purpose of protecting the electrode part, and the capacitor part is completed. |
