| 摘要 |
PURPOSE:To increase the logic cmplitude and the degree of wiring freedom by disposing common emitter-bias wirings substantially in parallel with and adjacent to injector wirings. CONSTITUTION:An integrated circuit device has I<2>L elements E1-E12. The I<2>L elements E1 and E2, E3 and E4, E5 and E6 form pairs, which are arranged in one row. Injector wirings I run across the centers of the respective pairs. The emitter region of a leteral P-N-p transistor is connected as a hole injection source of the respective elements to the injector wirings I. I<2>L elements E7-E12 are similarly connected to the injector wirings I. Bias wirings B are disposed in parallel with and adjacent to the two wirings I. The emitter region of the upward N-P-N transistor of each element is connected to the bias wiring B. |
