| 摘要 |
PURPOSE:To bond polyimide resin and the first insulating film easily and positively by stacking a metallic wiring layer, which has high resistance and corrosion resistance and to which impurities are added, and a polyimide resin film to the first insulating film on a Si substrate and opening the wiring layer and the resin film. CONSTITUTION:The SiO2 film 12 on the Si substrate 11 is opened 14 and coated with an Al alloy layer 21 containing 0.5-4% Si, resist masks 22 are formed, and wiring 13 is manufactured through etching by a mixed liquid of phosphoric acid+nitric acid+acetic acid. Only Al is removed, and an additive 23 of Si remains on the film 12 under a porous condition. The resist are removed, the whole is treated for 5-30min. at 350-500 deg.C in N2, the additive 23 is baked onto the film 12, and ohmic connection is obtained. The polyimide resin 16 is applied rotatively, and fast stuck through treatment for 1-2hr. at 100-250 deg.C, a resist masks 22 is shaped, an opening 15 with a taper of approximately 45 deg.C through the etching of a mixed liquid of hydrazin hydrate and ethylene amine, Al wiring 17 is stacked and the semiconductor device is completed. The use of SiO2, Al2O3 or Si3N4 as the additive is effective. |
