| 摘要 |
PURPOSE:To dope only a semiconductor film necessary in a superlattice made to grow, by implanting carrier ions into the superlattice and performing heat treatment in a condition capable of activating only carriers in a semiconductor film whose activation factor is high, out of semiconductor films composing a superlattice. CONSTITUTION:A substrate 1 is set in a crystal growth device, to form a superlattice 3 on a semiconductor layer. The substrate 1 is carried into an ion-implanting device through vacuum carrier passage and set to implant silicon ions into the superlattice 3. The substrate 1 is returned to a molecular beam epitaxy device through the vacuum carrier passage, to form an undoped GaAs channel layer 4 on the superlattice 3. Heat-treatment is performed to activate silicon of ion-implantation. Thus, only silicon ions staying at the GaAs film, out of those ion-implanted into the superlattice 3, are activated.
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