发明名称 SEMICONDUCTOR MEMORY
摘要 PURPOSE:To prevent reduction of allowance of operation caused by fluctuation of power source, grounding level and substrate potential by making a writing system, especially a data in buffer operatable state after termination of operation of a sense amplifier and generation of sufficient differential potential in a pair of bit lines. CONSTITUTION:In a memory provided with a clock generator for controlling a row system, a generator that receives synchronizing signals from a column system and synchronizing signals and row address strobe signals from the column system and generates controlling clock of write enable system, the write system clock generator 5 is activated on receiving a signal S2 generated after forming sufficient differential potential between bit lines after termination of amplification of signals by a sense amplifier 10 out of signals of the column system clock generator 1. Thereby, more stable writing operation can be made without narrowing operational allowance of a data in buffer 6 due to fluctuation of power source, grounding level and substrate potential caused by discharging of many bit lines at the time of operation of the sense amplifier.
申请公布号 JPS62149098(A) 申请公布日期 1987.07.03
申请号 JP19850291130 申请日期 1985.12.23
申请人 NEC CORP 发明人 WATANABE TOSHIHIKO
分类号 G11C11/407;G11C11/34;G11C11/409 主分类号 G11C11/407
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