| 摘要 |
PURPOSE:To prevent decrease in light emitting efficiency of a quantum well, by performing Zn diffusion in the quantum cell from the side surface of a mesa stripe, and making the depth of the Zn diffusion shallow. CONSTITUTION:On an n-GaAs substrate 1, a buffer layer 2, an n-type clad layer 3, a first guide layer 4, a quantum well 5a, a second guide layer 6, a p-type clad layer 7 and a cap layer 8 are sequentially grown as crystals. By using a photoetching method, a mesa stripe 9 is formed. By using a Zn diffusing method, a Zn diffused regions 10 is formed, and atoms in a quantum well 5b are made to be in irregular arrangement. At this time, the width of the mesa stripe 9 is tested so that the width of the quantum well 5a becomes about 1-3mum. Then an SiO2 film 11 is formed. The SiO2 film only on the mesa stripe 9 is removed. Finally, a p-type electrode 12 and an n-type electrode 13 are formed. Thus, decrease in light emitting efficiency of the quantum well 5a is prevented.
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