发明名称 FORMATION OF DEPOSITED FILM
摘要 PURPOSE:To form a deposited film having excellent electrical, optical and photoconductive characteristics at a high speed by introducing a gaseous raw material for forming the deposited film contg. halogen or/and hydrogen in the molecules thereof into a film forming space and activating the same by the catalytic effect of a heating element consisting of a transition metal. CONSTITUTION:A meshed member 309 consisting of an independent transition metal having a catalytic effect or the alloy thereof is provided in a film forming chamber 307 for forming the deposited film on a substrate 311. The gaseous raw material for forming the deposited film contg. the halogen or/and hydrogen in the molecule thereof is introduced from an introducing pipe 301 into the film forming chamber 307 and is brought into contact with the meshed member 309 so that said material is activated by the thermal dissociation reaction. The precursor and/or active seed which acts as the raw material for forming the deposited film i thereby formed and the deposited film is formed on the substrate 311 placed near the meshed member 309.
申请公布号 JPS62149880(A) 申请公布日期 1987.07.03
申请号 JP19850291063 申请日期 1985.12.24
申请人 CANON INC 发明人 KANAI MASAHIRO
分类号 H01L31/04;C23C16/24;C23C16/30;C23C16/44;C23C16/448;H01L21/205;H01L31/20 主分类号 H01L31/04
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