| 摘要 |
PURPOSE:To decrease an interface level largely, by forming a semiconductor layer comprising polycrystalline ZnSe characterized by uniform particle diameter and good orientation and an insulating layer, which has the approximately same orientation as that of said semiconductor layer by using a CVD method at a low temperature. CONSTITUTION:On a glass substrate 11, a gate electrode 12 made of Al and the like is formed. An insulating layer 13 having good orientation is formed by a CVD method. Then a ZnSe layer 14, which is characterized by good orientation and uniform particle diameter, is formed at the upper part of the gate electrode 12 by way of the insulating layer 13. Thereafter, N<+> layers 15 and 15' for ohmic contact are formed on both ends of the ZnSe layer 14 by a CVD method. Then, main electrodes 16 and 16' made of Al and the like are formed as a source electrode and a drain electrode. |
