| 摘要 |
PURPOSE:To facilitate control of conditions for forming a film and to improve the characteristics of the film, by introducing specific compounds X and Y into a film-forming chamber through a transportation space while introducing active species into the film-forming chamber through another transporation space surrounding said transporation space. CONSTITUTION:Specific compounds X and Y represented respectively by general formulas of RnMm and AaBb (in which R and B are hydrogen, halogen or a hydrocarbon radical, M is an element of the family II, B is an element of the family VI, and n, m, a and b are integers) are introduced from a supply pipe 212 through a supply pipe 205. H2 gas is introduced into an activation chamber 202 through a supply pipe 211, activated by a microwave power supply 206 and introduced, together with the compounds X and Y, into a film-forming chamber 201 through a nozzle 213. These active species are thereby reacted with the compounds to form a functional film on a substrate 207. According to this method, since no plasma is generated within the film-forming chamber, the film formation is not subjected to adverse effects of plasma and the conditions for forming the film can be controlled easily. Further, the characteristics of the formed film can be improved.
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