| 摘要 |
PURPOSE:To obtain a thin gate insulating film without pinholes, by forming a thin silicon nitride film on silicon, and thereafter performing thermal oxidation. CONSTITUTION:On an Si substrate 1, an Si3N4 film 2 is formed by thermal nitriding in an ammonia atmosphere at 1,200 deg.C or by deposition using a CVD method. Thermal oxidation of the substrate 1, on which the Si3N4 film 2 is formed, is performed in an oxygen atmosphere at about 1,000 deg.C, and an SiO2 film 4 is formed in pinholes. Thus a thin gate insulating film without pinholes is obtained.
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