| 摘要 |
A method for forming semiconductor devices, for example, FET devices in which the field oxide (14A, B) and ion implanted channel stopper (22A, B) are self-aligned. The method includes the steps of forming a first photoresist (16A, B) etch mask over a thick, i.e field, oxide on a wafer; etching exposed oxide, forming a complementary-image ion implant mask (20A) over etched active device areas, and ion (24) implanting a channel stopper layer (22A, B) at the interface between the field oxide and the wafer (12) surface. |
