A semiconductor light emitting device, such as a light emitting diode or laser, includes a substrate which is provided with a hole and a pn junction extending adjacent to and in parallel with the side wall of the hole. Thus, the side wall of the hole extends in a direction perpendicular to a main surface of the substrate. A pair of electrodes is provided such that current flows across the pn junction so that light emitted in a vertical direction which is perpendicular to the main surface of the substrate. The hole may be either a through hole or a bore hole. With the additional provision of a pair of resonators, there is provided a semiconductor laser.
申请公布号
DE3644380(A1)
申请公布日期
1987.07.02
申请号
DE19863644380
申请日期
1986.12.24
申请人
INABA,FUMIO;ITO,HIROMASA;RICOH CO.,LTD.;RICOH RESEARCH INSTITUTE OF GENERAL ELECTRONICS;MITSUBISHI CABLE INDUSTRIES,LTD.