| 摘要 |
<p>PURPOSE:To prevent the damage of the surface of a substrate and to block the diffusion of alkaline components from the substrate by a method wherein an organic polymer layer by plasma polymerization is formed on the substrate, when the thin film transistor is formed on the transparent substrate of glass or quartz. CONSTITUTION:An organic polymer film 8 of hydrocarbon series is formed on the transparent substrate 1 made of glass or quartz by the reduced pressure glow discharge of a hydrocarbon gas of methane, ethane, acetylene, ethylene or benzene. Next, a gate electrode 2 is provided at the center of this surface and then covered with a gate insulation layer 6, and an amorphous Si layer 5 is provided thereon into said transistor. Such a manner allows no decrease in the transparency due to the damage of the substrate 1 during the manufacturing process of the transistor because the chemical properties of the film 8 are extremely stable, and facilitates the manufacture because of durability to a temperature of approx. 400 deg.C.</p> |
