METHOD OF FORMING SINGLE CRYSTAL SILICON USING SPE SEED AND LASER CRYSTALLIZATION

摘要

A method of forming a single crystal silicon film using seeded laser crystallization. The method includes forming an insulating layer on a substrate, with seed windows formed in the insulating layer so as to expose portions of the substrate. A layer of amorphous silicon is formed on the insulating layer and in the seed windows. The amorphous silicon layer is heated so as to produce solid phase epitaxial growth of a single crystal silicon film in the seed window and extending over a portion of the insulating layer. During this heating step, the remainder of the amorphous silicon layer is converted to a polysilicon film. A laser beam is scanned across the polysilicon film to extend the single crystal silicon film over the remaining portion of the insulating layer by performing seeded laser crystallization using the solid phase epitaxial single crystal silicon film as a seed.