发明名称 |
PROCEDIMENTO PER LA CONNESSIONE A TERRA DI DISPOSITIVI PLANARI E CIRCUITI INTEGRATI E PRODOTTI COSI' OTTENUTI |
摘要 |
Grounding of source contacts (S) of flat devices and integrated circuits (of the FET type) is carried out according to the following process steps: a GaAs wafer is applied on a support and is covered on its free or rear face with photoresist; the latter is then etched along the border lines of the single FETs; the GaAs layer between contiguous FETs is removed also to make accessible the contacts S; a layer of noble metal is then deposited on the FET rear faces, so that it bridges the contacts S; the single metallized devices are disconnected from the initial support and finally are soldered to a package base. |
申请公布号 |
IT1175541(B) |
申请公布日期 |
1987.07.01 |
申请号 |
IT19840021553 |
申请日期 |
1984.06.22 |
申请人 |
TELETTRA TELEFONIA ELETTRONICA E RADIO SPA |
发明人 |
DONZELLI GIAMPIERO |
分类号 |
H01L21/338;H01L21/58;H01L21/74;H01L27/06;H01L29/06;H01L29/417;H01L29/812 |
主分类号 |
H01L21/338 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|