| 摘要 |
PURPOSE:To prevent a void from generating in a semiconductor device by providing the steps of forming a silicon oxide film on the wall of a groove, forming a hole, and filling silicon oxide in the groove and exposing an element forming region. CONSTITUTION:After relatively thin oxide films 13 are formed on a semiconductor substrate 11 and the wall of a groove 12 for separating between elements formed on the substrate 11, the film 13 on the upper portion of the groove 12 is selectively removed to form a V-shaped sectional hole 14 in the upper portion of a groove 12' of the film 13. Then, a silicon oxide film 15 is again laminated subsequently by a chemical vapor-phase growing method, and the groove 12' of the film 13 is filled with a silicon oxide film 15. Then, the films 13, 15 on the substrate 11 are removed to expose the surface of the substrate 11, i.e., an element forming region 11a. Thus, it can prevent a void 24 from generating.
|
