| 摘要 |
PURPOSE:To prevent the redistribution of an impurity or the deformation of a fine pattern due to absorption of unnecessary heat by forming a film having a large reflection coefficient for an emitted light on the surface of a region to which heat is not desired to be applied, thereby reflecting the emitted light. CONSTITUTION:An emitted light reflecting film 3 is grown on the entire surface of a semiconductor wafer 1. The film is coated with a resist 4, the pattern of a region 2 to be heat treated is exposed, and developed. With the resist 4 as a mask the film 3 is etched to open a window for passing the emitted light on the region 2 to be heat treated. After the resist 4 is separated, a heat treating light 5 is emitted from above the film 3. The light only on the portion having no film 3 is efficiently absorbed on a semiconductor wafer to enhance the temperature of the region 2 to heat treat it, and the film 3 is eventually removed.
|
