发明名称 |
PROCEDIMIENTO PARA LA OBTENCION DE CELULAS SOLARES DE SILICIO POLICRISTALINO EPITAXIADO |
摘要 |
<p>The process consists of (a) cleaning the surface of a substrate of polycrystalline silicon with surface damaged by cutting, by degreasing in 30% sodium hydroxide at 115 deg.C; (b) depositing a 20 micron layer of epitaxiated silicon by the LPCVD technique; (d) doping with B2H6 during growth of the layer; (e) doping with POCl3 at 870 deg.C to form a N+/P union; (f) attacking the latter oxide with HF and forming Al/Ag/Pb contacts by silk screen printing; (g) attacking the former oxide in the contact zone with HF and depositing two successive layers of gold/nickel by electroless deposition; (h) depositing a tin/lead layer over nickel contacts and formation of aluminic contact.</p> |
申请公布号 |
ES552528(D0) |
申请公布日期 |
1987.07.01 |
申请号 |
ES19860552528 |
申请日期 |
1986.02.28 |
申请人 |
CONSEJO SUPERIOR INVESTIGACIONES CIENTIFICAS |
发明人 |
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分类号 |
H01L31/18;(IPC1-7):H01L31/18 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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