发明名称 PHASE-LOCKED ARRAY SEMICONDUCTOR LASER
摘要 PURPOSE:To obtain a far-field pattern of single peak by applying thin films which offer phase shift of lambda/2 on every other oscillation edge planes. CONSTITUTION:On an edge plane 4 of phase-locked array laser, thin films 5 which causes phase shift of lambda/2 are applied on every other light emitting points to make a phase 6 of a wave front of a projected beam flat. For example, there is a method in which SiO2 is applied by sputtering and this is easy. The thickness is determined so that an optical path length, i.e. a refractive index multiplied by the thickness becomes equal to lambda/2. If the phase becomes flat by such a method, a far-field pattern 7 of the projected beam becomes what has a single peak. If this is applied to an optical system in a laser beam printer or an optical disc, the beam of extremely high output can be obtained with high efficiency.
申请公布号 JPS62147790(A) 申请公布日期 1987.07.01
申请号 JP19850287729 申请日期 1985.12.23
申请人 HITACHI LTD 发明人 TATENO KIMIO;TSUNODA YOSHITO
分类号 H01S5/00;G06K15/12;G11B7/125;H01S3/00;H01S5/028;H01S5/40 主分类号 H01S5/00
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