发明名称 DETECTION CIRCUIT FOR FAILURE OF ELEMENT
摘要 PURPOSE:To detect the failure of an element at low cost without increasing current detectors to the augmentation of the parallel number of thyristors by detecting the midpoint potential of the semiconductor element connected in series through a diode rectifier. CONSTITUTION:When thyristors 11-16 are all normal, potential at midpoints C-E where respective thyristor 11-16 is each connected in series represents midpoint potential between A and B, and currents do not flow through outputs F, G from a diode rectifier 34. When a short-circuit failure is generated in either of the thyristors 11-16, currents flow through a current detector 25, and the defect of the thyristor can be detected.
申请公布号 JPS62147950(A) 申请公布日期 1987.07.01
申请号 JP19850285605 申请日期 1985.12.20
申请人 TOSHIBA CORP 发明人 WATANABE YUKIO
分类号 G01R31/26;H02M1/00;H02M1/088 主分类号 G01R31/26
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