| 摘要 |
PURPOSE:To obtain a semiconductor device for withstanding a high voltage whose reverse withstand voltage is at least 1,000V by composing an intermediate layer which determines the high withstand voltage of the semiconductor device out of a silicon single crystal substrate. CONSTITUTION:On a low-concentration silicon substrate 1', a high-concentration silicon single crystal layer 2' is epitaxially grown. After that, a buried diffusion layer 3 is formed on a surface of the low-concentration silicon single crystal substrate 1' and an auxiliary electrode layer 4 is formed at the same time. A multilayer ohmic metal electrode layer 5 is formed on a surface of the high- concentration silicon single crystal layer 2' obtained by epitaxial growth. Namely, the low-concentration silicon single crystal substrate 1' and the high- concentration silicon single crystal layer 2 are in a uniform impurity concentration state, respectively. The boundary between them has an extremely clear tendency of concentration and the operation is done under the conditions close to that of single carriers in the respective regions when carriers move. Thus, a semiconductor device capable of withstanding a high voltage can be fabricated easily.
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