| 摘要 |
A mask for vacuum ultraviolet lithography has an alkaline earth halide or alkaline metal halide substrate 101. CaF2, BaF2, MgF2, SrF2 and LiF are specified. The masking structure, which is opaque in the UV region, comprises one or two layers 102, 103. Layers of polyimide and/or germanium are described which are patterned using a photoresist technique. If more than one layer is present, only one need be opaque to UV. <IMAGE> |
