| 摘要 |
PURPOSE:To enable a contact electrode to be taken out of the top of a separable oxide film, by forming a high melting-point layer on the separable oxide film from a source drain forming area after forming the separable oxide film. CONSTITUTION:A separable oxide film 2 is formed on a p-type semiconductor substrate 1, and after forming a tungsten layer 7, arsenic ions are then implanted. At this stage, however, the arsenic remains in the tungsten layer 7. An insulation coat 21 is then formed, and a resist layer 22 is formed on all the areas other than a gate area. Using this as a mask, an anisotropic etching is applied thereto to remove the resist layer 22. An insulating film 23 is then formed to apply an anisotropic etching thereto, leaving an insulating film 23a only along the sidewalls of the opening. A gate oxide film 3 is then formed, on which arsenic is diffused to form a source drain area. Further, a polycrystalline silicon layer 4 is formed to make a gate electrode, using a resist layer 24 as a mask. And forming a surface insulating film 25 all over the area, a contact hole is formed at a required position on the tungsten layer 7 in the source drain area, to which an Al wiring 12 is connected.
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